Onsemi - SVCA361

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NXP Semiconductors' BB201,215 is a varactor diode with 95pF capacitance and 15V peak reverse voltage. Commonly used in RF applications due to its variable capacitance feature, it operates b/w -55°C to 125°C. This small outline diode has a gull wing terminal form and is surface mountable for easy integration.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 27 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Toshiba 1SV313 is a single varactor diode with ultra high frequency for RF applications. It features a nominal capacitance of 7.85 pF, max reverse voltage of 10V, and operates up to 125°C. Ideal for small outline surface mount designs in electronic circuits requiring variable capacitance control.

BB909A-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

BB405B-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case ensures reliability.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ESVD301 by Onsemi is a single varactor diode with 2.6pF capacitance, suitable for X Band applications. With a max temp of 150 °C and 0.2W power dissipation, it's ideal for high-frequency circuits in chip carrier packages. The silicon diode offers variable capacitance ratio of 17 and operates at 30V reverse voltage.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 460 pF; Maximum Repetitive Peak Reverse Voltage: 15 V; Minimum Quality Factor: 150;

BB804-0 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C, making it ideal for RF tuning circuits. Its compact surface mount design ensures efficient space utilization in electronic devices.

BB809-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case ensures reliability.

MV2109RLRE by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance in electronic circuits, such as tuning RF filters or oscillators.

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Diode Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6;

The NXP Semiconductors BB148 is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 39.3 pF. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. With a min operating temperature of -55 °C and max of 125 °C, it offers reliable performance across a wide temperature range.

MMVL105GT1G by Onsemi is a varactor diode with a nominal capacitance of 2.15 pF and a breakdown voltage of 30 V, suitable for RF tuning applications. It features a small outline package style, gull wing terminal form, and can handle a max power dissipation of 0.2 W in surface mount configurations.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 20;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;