SZNUD3105DMT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	SZNUD3105DMT1G
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: 1.3 ohm; No. of Elements: 2;
Datasheet	SZNUD3105DMT1G Datasheet
In Stock	1,441

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.5 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	6 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	1.3 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,441	-	-

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