Onsemi - TF252TH-4

  1. Home
  2. Onsemi - TF252TH-4
TF252TH-4 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number TF252TH-4
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;
Datasheet TF252TH-4 Datasheet
In Stock1,586
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .1 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,586 - -

Popular Products

Category Top Products

TIP127 by Comset Semiconductors

TIP127

Comset Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP122 by Philips Semiconductors

TIP122

Philips Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP112 by Tt Electronics Plc

TIP112

Tt Electronics Plc

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
40474 by National Semiconductor

40474

National Semiconductor

40474 by National Semiconductor is an NPN transistor with a max power dissipation of 0.18W, hFE of 275, and fT of 900MHz. It is used in applications requiring low collector current such as signal amplification in electronic circuits due to its single configuration.
BC548 by Tt Electronics Plc

BC548

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846B by Philips Semiconductors

BC846B

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-40 by Shanghai Lunsure Electronic Technology

BC817-40

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2905A by Shanghai Lunsure Electronic Technology

2N2905A

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N3055 by Boca Semiconductor

2N3055

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC857C by North American Philips Discrete Products Div

BC857C

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MPSA92 by Plessey Semiconductors Discrete Components Div

MPSA92

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
TIP32C by Silicon Group

TIP32C

Silicon Group

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BC807-40 by Taiwan Semiconductor

BC807-40

Taiwan Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP125 by Intersil

TIP125

Intersil

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP122 by Harris Semiconductor

TIP122

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
BC807-25 by Kodenshi Auk

BC807-25

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BF862 by Philips Semiconductors

BF862

Philips Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: JUNCTION; Peak Reflow Temperature (C): 260;
TIP115 by General Electric Solid State

TIP115

General Electric Solid State

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
2N4401 by Vishay Intertechnology

2N4401

Vishay Intertechnology

Vishay Intertechnology's 2N4401 NPN transistor has a max power dissipation of 0.35W, min DC current gain of 100, and max collector current of 0.6A. Ideal for applications requiring high frequency operation up to 250MHz in a single configuration at temperatures up to 150°C.
TIP127 by Intersil

TIP127

Intersil

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;