Onsemi - TF256TH-3-TL-H

  1. Home
  2. Onsemi - TF256TH-3-TL-H
TF256TH-3-TL-H by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number TF256TH-3-TL-H
Description Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6;
Datasheet TF256TH-3-TL-H Datasheet
In Stock1,724
NAME DESCRIPTION
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,724 $0.068 $117.232

Popular Products

Category Top Products

TN2404K-T1-E3 by Vishay Intertechnology

TN2404K-T1-E3

Vishay Intertechnology

Vishay Intertechnology TN2404K-T1-E3 is a N-CHANNEL FET with 240V DS Breakdown Voltage, 0.2A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
BSS138NL6327 by Infineon Technologies

BSS138NL6327

Infineon Technologies

BSS138NL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A drain current, and 3.5 ohm on-resistance. Ideal for small outline applications requiring a single transistor with built-in diode in enhancement mode operation. Suitable for use in automotive electronics due to AEC-Q101 reference standard compliance.
FDN335N by Onsemi

FDN335N

Onsemi

FDN335N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.7A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. This SMALL OUTLINE transistor has GULL WING terminals and matte tin finish for surface mount assembly.
BSS138P by NXP Semiconductors

BSS138P

NXP Semiconductors

NXP Semiconductors' BSS138P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A ID. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. The transistor's package is surface mountable, with GULL WING terminals and a max drain-source on resistance of 1.6 ohm.
S-LBSS84LT1G by Leshan Radio

S-LBSS84LT1G

Leshan Radio

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
IRFD110PBF by Vishay Siliconix

IRFD110PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON;
SI2369DS-T1-GE3 by Vishay Intertechnology

SI2369DS-T1-GE3

Vishay Intertechnology

SI2369DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage and 7.6A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.029 ohm On Resistance. This SMALL OUTLINE transistor has a max power dissipation of 2.5W and can withstand temperatures from -55 to 150°C.
BS170 by Continental Device India

BS170

Continental Device India

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Additional Features: LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE;
2N7002T by Vishay Siliconix

2N7002T

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e0; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
NTR5103NT1G by Onsemi

NTR5103NT1G

Onsemi

NTR5103NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.26A drain current, and 2.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.42W at 150°C.
BSS138 by Infineon Technologies

BSS138

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
2N7002K by Vishay Intertechnology

2N7002K

Vishay Intertechnology

2N7002K by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
2N7002DWG by Changzhou Galaxy Century Microelectronics

2N7002DWG

Changzhou Galaxy Century Microelectronics

Small Signal Field-Effect Transistors;
IRLHS6376TRPBF by International Rectifier

IRLHS6376TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.6 W; Maximum Drain Current (ID): 3.6 A; Package Style (Meter): SMALL OUTLINE;
FDG6301N by Fairchild Semiconductor

FDG6301N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
BSS123W by Micro Commercial Components

BSS123W

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
SI4459ADY-T1-GE3 by Vishay Intertechnology

SI4459ADY-T1-GE3

Vishay Intertechnology

SI4459ADY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 29A Drain Current, and 0.005 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals.
BSS8402DW-7-F by Diodes Incorporated

BSS8402DW-7-F

Diodes Incorporated

BSS8402DW-7-F by Diodes Inc. is a small signal FET with N-channel and P-channel polarity. It has a min DS breakdown voltage of 60V and max drain current of 0.13A, making it suitable for switching applications. Its package style is small outline with gull wing terminals, and it operates in enhancement mode at temperatures up to 150°C.
NX2301P,215 by Nexperia

NX2301P,215

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .19 ohm;
BSS123W by Yangzhou Yangjie Electronics

BSS123W

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;