Onsemi - TN6725A

  1. Home
  2. Onsemi - TN6725A
TN6725A by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number TN6725A
Description NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; Package Shape: ROUND;
Datasheet TN6725A Datasheet
In Stock1,462
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.2 A
Configuration: DARLINGTON
Transistor Element Material: SILICON
JEDEC-95 Code: TO-226
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 4000
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,462 - -

Popular Products

Category Top Products

2N3904BU by Fairchild Semiconductor

2N3904BU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A,215 by Nexperia

MMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;
BC847C by Diotec Semiconductor Ag

BC847C

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Guangdong Kexin Industrial

MMBT2222A

Guangdong Kexin Industrial

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
2N2222AUB by Optek Technology

2N2222AUB

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847C by Central Semiconductor

BC847C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Good-ark Electronics

MMBT2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
SMMBT2907ALT1G by Onsemi

SMMBT2907ALT1G

Onsemi

SMMBT2907ALT1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 60V. Ideal for small outline applications requiring high DC current gain (hFE) of 100 and operating temperature up to 150°C. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance and peak reflow temp of 260°C.
MMBT2222ALT1 by Rectron

MMBT2222ALT1

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Turn On Time (ton): 35 ns; Package Body Material: PLASTIC/EPOXY;
BC817-40QAZ by Nexperia

BC817-40QAZ

Nexperia

Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
2N2219A by Motorola

2N2219A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel;
2N2907A by New England Semiconductor

2N2907A

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .6 A;
2N2905A by Micro Electronics

2N2905A

Micro Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC846B by Weitron Technology

BC846B

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3906 by Hi-tron Semiconductor

2N3906

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847B by Micro Commercial Components

BC847B

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Micro Commercial Components

MMBT3906

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
SMMBT3904LT3G by Onsemi

SMMBT3904LT3G

Onsemi

SMMBT3904LT3G by Onsemi is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and compact SMALL OUTLINE package. With hFE of 30, it offers reliable performance at up to 150°C operating temperature.
2N2907A by Allegro MicroSystems

2N2907A

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
SBC846BWT1G by Onsemi

SBC846BWT1G

Onsemi

The Onsemi SBC846BWT1G is a NPN BJT with max power dissipation of 0.15W, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its single configuration, surface mount capability, and max collector current of 0.1A.