UMC3NT2 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	UMC3NT2
Description	NPN AND PNP; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
Datasheet	UMC3NT2 Datasheet
In Stock	1,135

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	35
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	5
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.15 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT IN BIAS RESISTOR RATIO IS 1
Peak Reflow Temperature (C):	235
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,135	-	-

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