UMZ1NT1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	UMZ1NT1
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 114 MHz; Maximum Power Dissipation (Abs): .256 W; Maximum Collector Current (IC): .2 A;
Datasheet	UMZ1NT1 Datasheet
In Stock	2,336

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	114 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.2 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	200
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.256 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	235

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,336	$0.025	$58.400

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