Onsemi - ZTX614

  1. Home
  2. Onsemi - ZTX614
ZTX614 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number ZTX614
Description NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 10000; JEDEC-95 Code: TO-226AE;
Datasheet ZTX614 Datasheet
In Stock4,041
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .8 A
Configuration: DARLINGTON
Transistor Element Material: SILICON
JEDEC-95 Code: TO-226AE
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 10000
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,041 - -

Popular Products

Category Top Products

NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
BC547C by Onsemi

BC547C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Fairchild Semiconductor

BC817-25

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC847BE6327HTSA1 by Infineon Technologies

BC847BE6327HTSA1

Infineon Technologies

Infineon BC847BE6327HTSA1 is a NPN BJT transistor with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C. This surface-mount device has Gull Wing terminals in a small outline package.
MMBT3904LT3G by Onsemi

MMBT3904LT3G

Onsemi

MMBT3904LT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package with gull wing terminals makes it suitable for surface mount designs.
2N2222AUB by Microchip Technology

2N2222AUB

Microchip Technology

2N2222AUB by Microchip Technology is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/300ns) and high DC current gain (hFE=30).
MMBT2222A by Weitronic Enterprise

MMBT2222A

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBT3904 by Weitronic Enterprise

MMBT3904

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
MMBT2907A by Diotec Semiconductor Ag

MMBT2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC817-40 by Philips Semiconductors

BC817-40

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; No. of Elements: 1;
BC817-40 by Lite-on Semiconductor

BC817-40

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
MMBT2907A by Bytesonic Electronics

MMBT2907A

Bytesonic Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Dc Components

BC817-25

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
MMBT2907A by Secos

MMBT2907A

Secos

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
JANTX2N2222AUB by Micropac Industries

JANTX2N2222AUB

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Transistor Application: SWITCHING;
BC817-25QAZ by Nexperia

BC817-25QAZ

Nexperia

Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Reference Standard: AEC-Q101; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; JESD-609 Code: e3;
2N2222AUBC by Microsemi

2N2222AUBC

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
2N2222A by Solid State Devices

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222A by NXP Semiconductors

MMBT2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
BC817-25LT3G by Onsemi

BC817-25LT3G

Onsemi

BC817-25LT3G by Onsemi is a NPN BJT transistor with 160 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its 0.5A IC and 0.3W Ptot capabilities. Its GULL WING terminals and SOT package make it suitable for surface mount PCB designs.