Osram Opto Semiconductors - PLT5520_B1-6

  1. Home
  2. Osram Opto Semiconductors - PLT5520_B1-6
PLT5520_B1-6 by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number PLT5520_B1-6
Description LASER DIODE; Mounting Feature: RADIAL MOUNT; Peak Wavelength (nm): 520; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Threshold Current: 65 mA; Maximum Forward Voltage: 6.7 V;
Datasheet PLT5520_B1-6 Datasheet
NAME DESCRIPTION
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Packing Method: TRAY
Maximum Forward Voltage: 6.7 V
Minimum Operating Temperature: -20 Cel
Mounting Feature: RADIAL MOUNT
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Nominal Output Power: 30 W
Maximum Forward Current: .2 A
Peak Wavelength (nm): 520
Maximum Threshold Current: 65 mA
Maximum Operating Temperature: 60 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX6353EP35-AZ by Renesas Electronics

NX6353EP35-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .00000000005 s; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 2 V; Maximum Forward Current: .12 A;
TOLD322CAC by Toshiba

TOLD322CAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs;
SPL2Y98 by Infineon Technologies

SPL2Y98

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 975; No. of Functions: 1;
SDL3034-001 by Onsemi

SDL3034-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780;
NX8510UD53-A by Renesas Electronics

NX8510UD53-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Response Time: .0000000001 s; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .15 A;
CQF23/D14 by NXP Semiconductors

CQF23/D14

NXP Semiconductors

CQF23/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
STH61004G by Infineon Technologies

STH61004G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A;
TOLD321BAC by Toshiba

TOLD321BAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s;
STH61008N by Infineon Technologies

STH61008N

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -40 Cel; Maximum Forward Current: .12 A;
SDL7032-101 by Onsemi

SDL7032-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
NDL7701P2C by Renesas Electronics

NDL7701P2C

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 1.3 V; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .15 A;
TOED110 by Toshiba

TOED110

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310;
SPLPL90_3 by Osram Opto Semiconductors

SPLPL90_3

Osram Opto Semiconductors

Osram Opto Semiconductors' SPLPL90_3 is a SINGLE laser diode with 4.9mm size, peak wavelength of 905nm, and max forward current of 40A. It operates b/w -40 to 85°C and has a nominal output power of 75kW. Ideal for applications requiring high-power lasers in through-hole mounting configurations.
CQF23/D11 by NXP Semiconductors

CQF23/D11

NXP Semiconductors

CQF23/D11 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
NX8560SJ389-CC by Renesas Electronics

NX8560SJ389-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Response Time: .00000000004 s;
TOLD132 by Toshiba

TOLD132

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .105 A;
TOLD322CCB by Toshiba

TOLD322CCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -30 Cel; Maximum Forward Current: .15 A; Maximum Operating Temperature: 80 Cel;
SDL4034 by Onsemi

SDL4034

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 780; Semiconductor Material: GaAlAs;
SPL2F98 by Infineon Technologies

SPL2F98

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 3 m; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;
TOLD321BBA by Toshiba

TOLD321BBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310;