MTM78E2B0LBF by Panasonic | Transistors

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Manufacturer	Panasonic
Manufacturer's Part Number	MTM78E2B0LBF
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Terminal Position: DUAL; Terminal Form: FLAT;
Datasheet	MTM78E2B0LBF Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.025 ohm
Other Names:	Q6252989 MTM78E2B0LBFTR MTM78E2B0LBFDKR MTM78E2B0LBFCT
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	20 V
Maximum Drain Current (Abs) (ID):	4 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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