Powerex - QJD1210011

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QJD1210011 by Powerex

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Manufacturer Powerex
Manufacturer's Part Number QJD1210011
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 1200 V; No. of Terminals: 20; Package Style (Meter): FLANGE MOUNT;
Datasheet QJD1210011 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 250 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 20
Minimum DS Breakdown Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X20
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .025 ohm
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