Qorvo - QPA1003P

NARROW BAND HIGH POWER;

HMC751LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 17-27 GHz, ideal for microwave applications. Featuring a ceramic package, it has a max input power of -5 dBm and requires 4V supply voltage.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC505LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 6800-7400 MHz, and VSWR of 2. Ideal for narrowband low-power applications in temperatures from -40 to 85°C. Package: PLASTIC/EPOXY, Technology: BIPOLAR, Mounting: SURFACE MOUNT.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;

Analog Devices' HMC478MP86 is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. Ideal for RF applications requiring surface mount components in the -40°C to +85°C temperature range.

SPF5043ZSQ by Qorvo is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications requiring surface mount technology.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;

Analog Devices' HMC383LC4TR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 135mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.

Qorvo's TQP7M9106 is a wide band high power RF amplifier with 19 dB gain, operating from 50 MHz to 1500 MHz. It can handle up to 30 dBm CW input power and has a max VSWR of 10. Ideal for applications requiring high power amplification in RF & microwave systems.

XF1001-SC-0G0T by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

SGA3363Z by Qorvo is a RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wide band low power applications, this component features a plastic/epoxy package and requires a 2.6V power supply.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

The NXP Semiconductors MHT2012NT1 is a RF amplifier with 29.7 dB gain, operating b/w 2400-2500 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications in the RF & Microwave field. The component is constructed with plastic/epoxy material and features surface mounting for ease of installation.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.