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Manufacturer | Qorvo |
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Manufacturer's Part Number | TGF2023-2-10 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 10 A; Peak Reflow Temperature (C): 260; Package Body Material: UNSPECIFIED; |
Datasheet | TGF2023-2-10 Datasheet |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 17.4 dB |
Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM NITRIDE |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | 10 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Nickel/Gold (Ni/Au) |
JESD-609 Code: | e4 |
No. of Terminals: | 9 |
Terminal Position: | UPPER |
Package Style (Meter): | UNCASED CHIP |
JESD-30 Code: | R-XUUC-N9 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | KU BAND |
Maximum Drain Current (Abs) (ID): | 10 A |
Peak Reflow Temperature (C): | 260 |