Qt Optoelectronics - QSE114

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QSE114 by Qt Optoelectronics

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Manufacturer Qt Optoelectronics
Manufacturer's Part Number QSE114
Description PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
Datasheet QSE114 Datasheet
In Stock2,286
NAME DESCRIPTION
Other Names: QSE114QT
QSE114QT-ND
QSE114-NDR
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: .062 mm
Sub-Category: Photo Transistors
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1 mA
Maximum Power Dissipation: .1 W
Maximum Response Time: .000008 s
Maximum Operating Temperature: 100 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
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