Renesas Electronics - 1SS237

SNSR201MXT5G by Onsemi is a single microwave mixer diode with Schottky technology. It operates in C band to Ku band frequencies, with max forward voltage of 0.32V and output current of 0.05A. Ideal for applications requiring high frequency mixing and detection in compact chip carrier packages.

BAT1707E6327XT by Infineon Technologies is a Schottky mixer diode with 2 elements, suitable for VHF to UHF frequencies. It has a max power dissipation of 0.15W and operates b/w -55°C to 125°C. The diode's package is small outline, surface mountable, with dual terminals ideal for microwave applications.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR19-AR1 by STMicroelectronics is a single ultra high frequency mixer diode with 1 pF capacitance and 0.25 uA reverse current. It operates at a max temperature of 125 °C, suitable for microwave applications requiring Schottky technology and 30 A output current.

MBD110DWT1 by Onsemi is a microwave mixer & detector diode with 2 elements, suitable for very high to ultra high frequency applications. It features a max forward voltage of 0.6V and can operate at temperatures up to 125 °C. This Schottky diode has a peak power dissipation of 0.12W and is surface mountable in a small outline package shape.

BAT19-AZX by STMicroelectronics is a single-config microwave mixer diode with ultra-high frequency band. Featuring a max diode capacitance of 1.2 pF and max reverse current of 0.1 uA, it is ideal for applications requiring high-frequency signal mixing in electronic circuits. With a Schottky technology and silicon diode element material, this diode operates at temperatures up to 125 °C, making it suitable for various RF applications.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

1SS390SMT2R by ROHM is a high frequency mixer diode with a max diode capacitance of 1.2 pF and max reverse current of 0.01 uA. It is used in microwave applications and has a small outline package style for surface mount installation.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 6.5 dB; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD355LT1G by Onsemi is a microwave mixer & detector diode with common anode config and 2 elements. Operating in the ultra high frequency band, it has a max power dissipation of 0.225W. Ideal for applications requiring small outline surface mount diodes in high temperature environments.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;