Renesas Electronics - 2SA1190DTZ-E

  1. Home
  2. Renesas Electronics - 2SA1190DTZ-E
2SA1190DTZ-E by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SA1190DTZ-E
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 250;
Datasheet 2SA1190DTZ-E Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .4 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 250
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS138-G by Weitron Technology

BSS138-G

Weitron Technology

Other Transistors;
BC557B by Allegro MicroSystems

BC557B

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC856B by Plessey Semiconductors Discrete Components Div

BC856B

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3055 by Intersil

2N3055

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
PMF170XP,115 by NXP Semiconductors

PMF170XP,115

NXP Semiconductors

NXP Semiconductors PMF170XP,115 is a P-CHANNEL FET with 1A max drain current and 0.36W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.
2N2907A by Shanghai Lunsure Electronic Technology

2N2907A

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
TIP32C by Inchange Semiconductor

TIP32C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
FDD8424H_F085 by Fairchild Semiconductor

FDD8424H_F085

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 20 A; Maximum Operating Temperature: 150 Cel;
TIP110 by Panasonic

TIP110

Panasonic

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: Tin/Lead (Sn/Pb);
BDX53C by Central Semiconductor

BDX53C

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
2N2907A by Bytesonic Electronics

2N2907A

Bytesonic Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC557B by Secos

BC557B

Secos

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 180;
JANTXV2N3055 by Hi-rel Components

JANTXV2N3055

Hi-rel Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3904 by Forward International Electronics

2N3904

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
TIP32C by Panasonic

TIP32C

Panasonic

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
199 by Solitron Devices

199

Solitron Devices

Other Transistors;
BD140 by Tt Electronics Plc

BD140

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N2905A by Philips Semiconductors

2N2905A

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
TIP127 by Sinyork

TIP127

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .065 W; Maximum Collector Current (IC): .005 A; Maximum Operating Temperature: 85 Cel;
BC847C/AU,215 by NXP Semiconductors

BC847C/AU,215

NXP Semiconductors

BC847C/AU,215 by NXP Semiconductors is an NPN transistor with a single configuration. It has a max power dissipation of 0.25W and a min DC current gain of 420. Ideal for applications requiring a max collector current of 0.1A, such as in high-frequency circuits up to 100MHz operating at temperatures up to 150°C.