Renesas Electronics - 2SA1646K-S-AZ

  1. Home
  2. Renesas Electronics - 2SA1646K-S-AZ
2SA1646K-S-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SA1646K-S-AZ
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1;
Datasheet 2SA1646K-S-AZ Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 40 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 200
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC846 by Sinyork

BC846

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
FDD8424H_F085 by Fairchild Semiconductor

FDD8424H_F085

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 20 A; Maximum Operating Temperature: 150 Cel;
MMBT5551 by Samsung

MMBT5551

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A; Terminal Finish: Tin/Lead (Sn/Pb);
BC846B by Secos

BC846B

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
D44H11 by Inchange Semiconductor

D44H11

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
2N2219A by North American Philips Discrete Products Div

2N2219A

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC557B by Jiangsu Changjiang Electronics Technology

BC557B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP112 by Tt Electronics Plc

TIP112

Tt Electronics Plc

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP29C by Mospec Semiconductor

TIP29C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BC337-40 by Itt Components

BC337-40

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP125 by Inchange Semiconductor

TIP125

Inchange Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP117 by North American Philips Discrete Products Div

TIP117

North American Philips Discrete Products Div

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
BFT92W/A2,115 by NXP Semiconductors

BFT92W/A2,115

NXP Semiconductors

The NXP Semiconductors BFT92W/A2,115 is a PNP transistor with a single configuration and surface mount capability. It features a max power dissipation of 0.3W, min DC current gain of 20 (hFE), and max operating temp of 150°C. Ideal for low-power applications in electronics requiring precise signal amplification.
BD139-10 by National Semiconductor

BD139-10

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
3003 by Acrian

3003

Acrian

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
MMBT2222A by Unisonic Technologies

MMBT2222A

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
BC327-25 by Sprague Electric

BC327-25

Sprague Electric

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
BC856B by Vishay Intertechnology

BC856B

Vishay Intertechnology

Vishay Intertechnology's BC856B is a PNP transistor with a max power dissipation of 0.31W, min DC current gain of 200, and max operating temp of 150°C. Ideal for applications requiring a single configuration such as surface mount technology with a matte tin finish.
2N7000-G by Weitron Technology

2N7000-G

Weitron Technology

Other Transistors;
TIP50 by Sinyork

TIP50

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): .04 W; Maximum Collector Current (IC): .001 A;