Renesas Electronics - 2SA673AKDTZ-E

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2SA673AKDTZ-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SA673AKDTZ-E
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .5 A;
Datasheet 2SA673AKDTZ-E Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 120 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN COPPER
No. of Terminals: 3
Maximum Power Dissipation (Abs): .4 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-92
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 160
JESD-609 Code: e2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
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