Renesas Electronics - 2SB1072(L)

  1. Home
  2. Renesas Electronics - 2SB1072(L)
2SB1072(L) by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SB1072(L)
Description PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 1000;
Datasheet 2SB1072(L) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 4 A
Maximum Power Dissipation (Abs): 20 W
Configuration: DARLINGTON
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 1000
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

5401 by Diodes Incorporated

5401

Diodes Incorporated

Other Transistors;
BC857B by Philips Semiconductors

BC857B

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC857B by Allegro MicroSystems

BC857B

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3904 by North American Philips Discrete Products Div

2N3904

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
TIP32C by National Semiconductor

TIP32C

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BC337-16 by North American Philips Discrete Products Div

BC337-16

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
2N3055H by Inchange Semiconductor

2N3055H

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP42C by National Semiconductor

TIP42C

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC856B by North American Philips Discrete Products Div

BC856B

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BD679A by Transys Electronics

BD679A

Transys Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
NX3008CBKS,115 by NXP Semiconductors

NX3008CBKS,115

NXP Semiconductors

NXP Semiconductors' NX3008CBKS,115 is a N/P-channel transistor with 0.35A max drain current and 0.445W power dissipation. It operates in enhancement mode with 260°C peak reflow temp, suitable for various electronic applications.
BD139 by Toshiba

BD139

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
SI4532DY by Vishay Intertechnology

SI4532DY

Vishay Intertechnology

SI4532DY by Vishay Intertechnology is a N-CHANNEL AND P-CHANNEL transistor with a max drain current of 3.9A and max power dissipation of 2W. It is a surface mount device suitable for applications requiring metal-oxide semiconductor technology, such as temperature-sensitive systems operating up to 150°C.
TIP32C by Intersil

TIP32C

Intersil

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
2N2222AUA by New England Semiconductor

2N2222AUA

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BFT92WT/R by Philips Semiconductors

BFT92WT/R

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
TIP111 by Thomson Consumer Electronics

TIP111

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
BC337-40 by Jiangsu Changjiang Electronics Technology

BC337-40

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;
2N3019 by Semiconductors

2N3019

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
BC817-25 by Jiangsu Changjiang Electronics Technology

BC817-25

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 160;