Renesas Electronics - 2SB1430-K-AZ

2SB1430-K-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SB1430-K-AZ
Description PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
Datasheet 2SB1430-K-AZ Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 8000
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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