2SB1465 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SB1465
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): .3 A;
Datasheet	2SB1465 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	25 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.3 A
Configuration:	DARLINGTON WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1500
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	25 W
Maximum Collector-Emitter Voltage:	300 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Moisture Sensitivity Level (MSL):	1

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