Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SB1669-S |
| Description | PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 3 A; |
| Datasheet | 2SB1669-S Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 5 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 3 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| JEDEC-95 Code: | TO-262AA |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | PNP |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 20 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 25 W |
| Maximum Collector-Emitter Voltage: | 60 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
