Renesas Electronics - 2SB562B

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2SB562B by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SB562B
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 1 A;
Datasheet 2SB562B Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 350 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-92
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 85
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .9 W
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 140 Cel
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