Renesas Electronics - 2SB649

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2SB649 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SB649
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 1.5 A;
Datasheet 2SB649 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 140 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 30
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 20 W
Maximum Collector-Emitter Voltage: 120 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
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