Renesas Electronics - 2SB795-M

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2SB795-M by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SB795-M
Description PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;
Datasheet 2SB795-M Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.5 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 2000
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 10 W
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 140 Cel
Case Connection: COLLECTOR
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