Renesas Electronics - 2SB806(0)-T1-AZ

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2SB806(0)-T1-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SB806(0)-T1-AZ
Description Power Bipolar Transistors;
Datasheet 2SB806(0)-T1-AZ Datasheet
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BD243C by Fairchild Semiconductor

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MJE340G by Onsemi

MJE340G

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MJE340G by Onsemi is a NPN BJT with 300V VCEO, 20W Ptot, and hFE of 30. Ideal for power applications due to its high voltage rating and low collector current. Its single configuration and through-hole terminals make it suitable for various electronic designs.
TIP3055G by Onsemi

TIP3055G

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TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.
D44H11 by Onsemi

D44H11

Onsemi

D44H11 by Onsemi is a NPN BJT transistor with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
BUV48A by Central Semiconductor

BUV48A

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; JESD-609 Code: e0;
BD679 by Baneasa S A

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NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
TIP35C by Inchange Semiconductor

TIP35C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP127 by Rectron

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NJVMJD122T4G by Onsemi

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NJVMJD122T4G by Onsemi is a NPN Darlington BJT with built-in diode and resistor, ideal for amplifier applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it operates b/w -65 to 150°C.
TIP3055 by STMicroelectronics

TIP3055

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP41C by Power Innovations

TIP41C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
TIP35C by Microsemi

TIP35C

Microsemi

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BDX53C by Fairchild Semiconductor

BDX53C

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
ULN2803A by STMicroelectronics

ULN2803A

STMicroelectronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;
BDW93C by SPC TECHNOLOGY/ MULTICOMP

BDW93C

SPC TECHNOLOGY/ MULTICOMP

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TIP3055 by Texas Instruments

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TIP110 by Samsung

TIP110

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
D44H11 by STMicroelectronics

D44H11

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP117 by Nte Electronics

TIP117

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
ULN2003APWRG4 by Texas Instruments

ULN2003APWRG4

Texas Instruments

ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.