2SB831C by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SB831C
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .7 A; Maximum Collector-Emitter Voltage: 20 V;
Datasheet	2SB831C Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.7 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	120
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.15 W
Maximum Collector-Emitter Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel

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