Renesas Electronics - 2SC1342CRR

  1. Home
  2. Renesas Electronics - 2SC1342CRR
2SC1342CRR by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC1342CRR
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 320 MHz; Maximum Collector Current (IC): .03 A; Maximum Collector-Base Capacitance: 1.5 pF;
Datasheet 2SC1342CRR Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 320 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .03 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-92
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance: 1.5 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

934064615115 by NXP Semiconductors

934064615115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .07 A; Additional Features: LOW NOISE;
934047460135 by NXP Semiconductors

934047460135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .012 A; Terminal Position: DUAL;
MSC2295-BT1G by Onsemi

MSC2295-BT1G

Onsemi

MSC2295-BT1G by Onsemi is a NPN BJT transistor for RF applications. With hFE of 70, it operates at 150 °C max temperature and has fT of 150 MHz. Ideal for amplifier circuits due to its small outline package and low collector current of 0.03 A.
MCH6001-TL-E by Sanyo Semiconductor

MCH6001-TL-E

Sanyo Semiconductor

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;
HFA3101BZ by Intersil

HFA3101BZ

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Package Body Material: PLASTIC/EPOXY;
BF959RLRA by Onsemi

BF959RLRA

Onsemi

BF959RLRA by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operates at up to 150 °C, making it suitable for various RF small signal designs.
MPSH10RLRE by Onsemi

MPSH10RLRE

Onsemi

MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.
BFS17 by Temic Semiconductors

BFS17

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2100 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
934055191115 by NXP Semiconductors

934055191115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Collector Current (IC): .025 A; Moisture Sensitivity Level (MSL): 1;
LA733Q by Onsemi

LA733Q

Onsemi

LA733Q by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 1.5W, hFE of 135, and fT of 100MHz. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
MMBTH10Q-7-F by Diodes Incorporated

MMBTH10Q-7-F

Diodes Incorporated

RF Small Signal Bipolar Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
934063133215 by NXP Semiconductors

934063133215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
HFA3102B96 by Harris Semiconductor

HFA3102B96

Harris Semiconductor

HFA3102B96 by Harris Semiconductor is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 8V and a max collector current of 0.03A. It is commonly used as an amplifier in RF applications, specifically in the C band frequency range.
MPS3640 by Crimson Semiconductor

MPS3640

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
MPS918RLRA by Onsemi

MPS918RLRA

Onsemi

MPS918RLRA by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 600 MHz and Vce(max) of 15V, making it suitable for ultra-high frequency amplifier applications. Packaged in plastic/epoxy, it features a collector-base capacitance of 3pF and collector current up to 0.05A.
BFR92ALT1 by Advanced Power Technology

BFR92ALT1

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Power Dissipation (Abs): .273 W; Maximum Collector Current (IC): .025 A;
HFA3127B by Intersil

HFA3127B

Intersil

Intersil's HFA3127B is an NPN BJT transistor with 5 elements, ideal for amplifier applications in the ultra-high frequency band. With a max fT of 8000 MHz and IC of 0.037 A, this transistor features a Gull Wing terminal form and small outline package style for surface mount assembly.
934067708235 by NXP Semiconductors

934067708235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
2N2369A by Thomson-csf Semiconductors

2N2369A

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;
START405TR by STMicroelectronics

START405TR

STMicroelectronics

START405TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.045 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.