Renesas Electronics - 2SC2223F13-T1B

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2SC2223F13-T1B by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC2223F13-T1B
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;
Datasheet 2SC2223F13-T1B Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 600 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .02 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .15 W
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
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