Renesas Electronics - 2SC2758-U18

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2SC2758-U18 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC2758-U18
Description RF Small Signal Bipolar Transistors;
Datasheet 2SC2758-U18 Datasheet
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MSC2295-CT1G by Onsemi is an NPN RF BJT transistor with a max operating temperature of 150 °C. It has a min DC current gain of 110 and a nominal transition frequency of 150 MHz, making it suitable for amplifier applications. The package style is small outline with Gull Wing terminals and a max collector-emitter voltage of 20V.
934056631215 by NXP Semiconductors

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NSVMMBTH81LT3G by Onsemi

NSVMMBTH81LT3G

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HFA3135IHZ96 by Intersil

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2N3553 by STMicroelectronics

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): 1 A;
CA3086M96 by Harris Semiconductor

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934061289135 by NXP Semiconductors

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NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;
2SC5374A-TL-E by Onsemi

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MPSH10G by Onsemi

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MPSH10G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max power dissipation of 0.35W and operates in the ultra-high frequency band.
2N2222 by General Diode

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2907AUA by Vpt Components

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BFT92T/R by NXP Semiconductors

BFT92T/R

NXP Semiconductors

The NXP Semiconductors BFT92T/R is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications in the UHF band. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. The package is a small outline with gull wing terminals and can operate up to 150°C.
MMBTH10M3T5G by Onsemi

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MMBTH10 by Changzhou Galaxy Century Microelectronics

MMBTH10

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
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1075MP

Ghz Technology

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