Renesas Electronics - 2SC3632-Z-E1-AZ

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2SC3632-Z-E1-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC3632-Z-E1-AZ
Description Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet 2SC3632-Z-E1-AZ Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
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TIP110 by Inchange Semiconductor

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TIP112 by Nte Electronics

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TIP117G by Onsemi

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TIP117G by Onsemi is a PNP power BJT with 50W max power dissipation, 100V max collector-emitter voltage, and 2A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with 3 terminals in a rectangular shape.
BD139 by Continental Device India

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BDX53C by Crimson Semiconductor

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
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Crimson Semiconductor

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): 30;
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