Renesas Electronics - 2SD1033-S-AZ

  1. Home
  2. Renesas Electronics - 2SD1033-S-AZ
2SD1033-S-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SD1033-S-AZ
Description Other Transistors;
Datasheet 2SD1033-S-AZ Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP117 by North American Philips Discrete Products Div

TIP117

North American Philips Discrete Products Div

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N3055 by Powertech

2N3055

Powertech

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP50 by Thomson Consumer Electronics

TIP50

Thomson Consumer Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
PMF170XP,115 by NXP Semiconductors

PMF170XP,115

NXP Semiconductors

NXP Semiconductors PMF170XP,115 is a P-CHANNEL FET with 1A max drain current and 0.36W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.
TIP31C by Unisonic Technologies

TIP31C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP147 by Comset Semiconductors

TIP147

Comset Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;
MMBT4401 by Jiangsu Changjiang Electronics Technology

MMBT4401

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
TIP120 by Jiangsu Changjiang Electronics Technology

TIP120

Jiangsu Changjiang Electronics Technology

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.
BD139-10 by Motorola

BD139-10

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BC807-40 by Kodenshi Auk

BC807-40

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
2N3904 by Plessey Semiconductors Discrete Components Div

2N3904

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2222AUA by New England Semiconductor

2N2222AUA

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
TIP142T by Inchange Semiconductor

TIP142T

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
TIP111 by Mospec Semiconductor

TIP111

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
2N2905A by Shanghai Lunsure Electronic Technology

2N2905A

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BD243C by Mospec Semiconductor

BD243C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
TIP42C by Thomson Consumer Electronics

TIP42C

Thomson Consumer Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC846B by Vishay Intertechnology

BC846B

Vishay Intertechnology

Vishay Intertechnology's BC846B is an NPN transistor with a min hFE of 200 and max IC of 0.1A. With a fT of 100MHz, it can handle up to 0.3W power dissipation. Ideal for applications requiring high DC current gain and low collector current in surface mount configurations.
ZTX651M1 by Plessey Semiconductors Discrete Components Div

ZTX651M1

Plessey Semiconductors Discrete Components Div

Other Transistors;