Renesas Electronics - 2SD1420EBTR

  1. Home
  2. Renesas Electronics - 2SD1420EBTR
2SD1420EBTR by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SD1420EBTR
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Form: FLAT; Transistor Application: AMPLIFIER;
Datasheet 2SD1420EBTR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 120 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2219A by Electronic Transistors

2N2219A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N3906 by Kec

2N3906

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
ZTX653 by Diodes Incorporated

ZTX653

Diodes Incorporated

ZTX653 by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 2A, and transition frequency of 175MHz. It is used in applications requiring high-speed switching such as power supplies and amplifiers due to its silicon element material and single configuration design.
2N2905A by Micro Commercial Components

2N2905A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Package Body Material: METAL; Maximum Turn Off Time (toff): 300 ns;
BC847BLT3G by Onsemi

BC847BLT3G

Onsemi

BC847BLT3G by Onsemi is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 45V and a min DC current gain of 200. It is commonly used in applications such as amplifiers, switches, and general-purpose circuits.
MMBT3904 by Promax-johnton

MMBT3904

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL; No. of Terminals: 3;
2N2222AUB by Aeroflex/metelics

2N2222AUB

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DC Current Gain (hFE): 100;
JANTX2N2222A by Motorola

JANTX2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Maximum Turn On Time (ton): 35 ns;
BC817-40 by Itt Semiconductor

BC817-40

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; JEDEC-95 Code: TO-236; Maximum Collector-Base Capacitance: 12 pF;
MMBT3904 by Zowie Technology

MMBT3904

Zowie Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC847B by Taiwan Semiconductor

BC847B

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
ULN2803AFWG by Toshiba

ULN2803AFWG

Toshiba

Toshiba's ULN2803AFWG is an NPN BJT with 8 Darlington banks, built-in diode and resistor. Ideal for switching applications, it has a max IC of 0.5A and VCE of 50V. With a hFE of 1000, this surface-mount transistor comes in a small outline package shape.
BC547B by Motorola

BC547B

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Power Dissipation Ambient: 1.5 W;
JANTX2N2222AUB by Silicon Transistor

JANTX2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2219A by New England Semiconductor

2N2219A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2907A by Asi Semiconductor

2N2907A

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
MMBT2907A by Diotec Semiconductor Ag

MMBT2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC847C by Rectron

BC847C

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;
MMBT3904 by Bytesonic Electronics

MMBT3904

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;