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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SD1616 |
| Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): 1 A; |
| Datasheet | 2SD1616 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 160 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 1 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .75 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .75 W |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-92 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 81 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 50 V |
| Maximum Collector-Base Capacitance: | 19 pF |
| Maximum VCEsat: | .3 V |
