2SD1692-M by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SD1692-M
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 2000;
Datasheet	2SD1692-M Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-126
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	2000
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1.3 W
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Additional Features:	BUILT IN BIAS RESISTANCE RATIO IS 0.11
Maximum Operating Temperature:	150 Cel

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