2SD2101 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SD2101
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 3;
Datasheet	2SD2101 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	10 A
Configuration:	DARLINGTON WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-220AB
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1500
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	30 W
Maximum Collector-Emitter Voltage:	200 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED

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