Renesas Electronics - 2SD2217

  1. Home
  2. Renesas Electronics - 2SD2217
2SD2217 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SD2217
Description NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 45 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;
Datasheet 2SD2217 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 45 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .3 A
Configuration: DARLINGTON WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 1500
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 300 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP147T by Onsemi

TIP147T

Onsemi

TIP147T by Onsemi is a PNP BJT with 80W power dissipation, 500 min hFE, and 10A max collector current. Ideal for high-power applications like motor control and audio amplifiers due to its 100V max VCE and built-in diode/resistor in a rectangular package.
TIP110 by Semiconductors

TIP110

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
TIP42C by Texas Instruments

TIP42C

Texas Instruments

TIP42C by Texas Instruments is a PNP BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.
TIP35C by New Jersey Semiconductor Products

TIP35C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Transistor Element Material: SILICON;
TIP122 by Microsemi

TIP122

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
BCP56-16 by Diotec Semiconductor Ag

BCP56-16

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
2N3055 by Baneasa S A

2N3055

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; No. of Elements: 1;
TIP125 by Fairchild Semiconductor

TIP125

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP31C by Fairchild Semiconductor

TIP31C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP117 by Rectron

TIP117

Rectron

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3;
NJVMJD122T4G by Onsemi

NJVMJD122T4G

Onsemi

NJVMJD122T4G by Onsemi is a NPN Darlington BJT with built-in diode and resistor, ideal for amplifier applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it operates b/w -65 to 150°C.
BDX53C by Continental Device India

BDX53C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
JAN2N3055 by Aeroflex/metelics

JAN2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JEDEC-95 Code: TO-3; No. of Elements: 1;
TIP32CG by Onsemi

TIP32CG

Onsemi

TIP32CG by Onsemi is a PNP power BJT with 3A max collector current, 40W power dissipation, and 100V max collector-emitter voltage. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals.
TIP120 by General Transistor

TIP120

General Transistor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
TIP47 by Tt Electronics Plc

TIP47

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
BCP56-16-TP by Micro Commercial Components

BCP56-16-TP

Micro Commercial Components

Micro Commercial Components' BCP56-16-TP is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages. Suitable for surface mount designs operating b/w -55°C to 150°C.
TIP29C by Motorola

TIP29C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP125 by International Devices

TIP125

International Devices

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
D44H8 by Fairchild Semiconductor

D44H8

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;