2SD756 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SD756
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): .05 A;
Datasheet	2SD756 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	350 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	125
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.75 W
Maximum Collector-Emitter Voltage:	120 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1

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