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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SJ165-A |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e6; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | 2SJ165-A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .1 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN BISMUTH |
| JESD-609 Code: | e6 |
| Maximum Power Dissipation (Abs): | .25 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .1 A |
| Peak Reflow Temperature (C): | 260 |








