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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SJ196-AZ |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .75 W; Additional Features: GATE PROTECTED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | 2SJ196-AZ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .75 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 1.5 ohm |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e1 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | GATE PROTECTED |
| Maximum Drain Current (Abs) (ID): | 1 A |
| Peak Reflow Temperature (C): | 260 |
