Renesas Electronics - 2SJ196-T

  1. Home
  2. Renesas Electronics - 2SJ196-T
2SJ196-T by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ196-T
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .75 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Datasheet 2SJ196-T Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .75 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1 A
Maximum Drain Current (Abs) (ID): 1 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BUX87 by Telefunken Microelectronics

BUX87

Telefunken Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
TIP29C by Mospec Semiconductor

TIP29C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
MMBT3906 by Weitron Technology

MMBT3906

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
MPS-A92 by Thomson Consumer Electronics

MPS-A92

Thomson Consumer Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
TIP110 by Iskra Semic Capacitors Industry

TIP110

Iskra Semic Capacitors Industry

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
BC847C by Jiangsu Changjiang Electronics Technology

BC847C

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP31C by Silicon Group

TIP31C

Silicon Group

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
2N3904 by North American Philips Discrete Products Div

2N3904

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BD138 by Tt Electronics Plc

BD138

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC857B by Jiangsu Changjiang Electronics Technology

BC857B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BS170 by Plessey Semiconductors Discrete Components Div

BS170

Plessey Semiconductors Discrete Components Div

Other Transistors;
2N3906 by North American Philips Discrete Products Div

2N3906

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MPSA42 by North American Philips Discrete Products Div

MPSA42

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BDX53C by Comset Semiconductors

BDX53C

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
FDD8424H_F085 by Fairchild Semiconductor

FDD8424H_F085

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 20 A; Maximum Operating Temperature: 150 Cel;
TIP50 by Inchange Semiconductor

TIP50

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC807-40 by Vishay Intertechnology

BC807-40

Vishay Intertechnology

Vishay Intertechnology's BC807-40 is a PNP transistor with max. power dissipation of 0.35W, min. DC current gain of 250, and max. collector current of 0.5A. Ideal for surface mount applications in electronics due to its single configuration and matte tin terminal finish, operating up to 150°C efficiently.
BC847 by ROHM

BC847

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP115 by National Semiconductor

TIP115

National Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
IRF7420TRPBF by International Rectifier

IRF7420TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;