Renesas Electronics - 2SJ483

  1. Home
  2. Renesas Electronics - 2SJ483
2SJ483 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ483
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: O-PBCY-T3; Maximum Operating Temperature: 150 Cel;
Datasheet 2SJ483 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .9 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 5 A
Maximum Drain-Source On Resistance: .17 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N7000 by Continental Device India

2N7000

Continental Device India

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): CYLINDRICAL; Additional Features: LOGIC LEVEL COMPATIBLE;
2N7002K by Lite-on Semiconductor

2N7002K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
BSS139H6906XTSA1 by Infineon Technologies

BSS139H6906XTSA1

Infineon Technologies

BSS139H6906XTSA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.1A ID, and 30Ω RDS(ON). Ideal for DEPLETION MODE operation in applications requiring low feedback capacitance (3.3pF), such as small signal amplification in electronic circuits.
NTJD4001NT1G by Onsemi

NTJD4001NT1G

Onsemi

NTJD4001NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 30V DS breakdown voltage, 0.25A drain current, and 2.5 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150°C.
ZXM61P03FTA by Diodes Incorporated

ZXM61P03FTA

Diodes Incorporated

ZXM61P03FTA by Diodes Inc. is a P-CHANNEL FET with 30V DS breakdown voltage, 1.1A max drain current, and 0.35 ohm max on resistance. It is used for switching applications in small outline packages, featuring MOSFET technology and operating up to 150°C.
DMN65D8L-7 by Diodes Incorporated

DMN65D8L-7

Diodes Incorporated

Diodes Inc.'s DMN65D8L-7 is a N-channel FET with 60V DS breakdown voltage, 0.27A ID, and 4 ohm RDS. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and enhancement mode operation. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
FDN306P by Onsemi

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
NDC7001C by Onsemi

NDC7001C

Onsemi

NDC7001C by Onsemi is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.51A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
FDV301N by Onsemi

FDV301N

Onsemi

FDV301N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 0.22A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.35W. This small outline transistor has a temperature range of -55 to 150 °C and features a built-in diode for efficient performance.
SI4909DY-T1-GE3 by Vishay Siliconix

SI4909DY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8 A; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .027 ohm;
SI1308EDL-T1-GE3 by Vishay Intertechnology

SI1308EDL-T1-GE3

Vishay Intertechnology

SI1308EDL-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 1.4A max drain current. Ideal for switching applications, it features a built-in diode, 0.132 ohm max on resistance, and operates in enhancement mode at up to 150°C.
2N7002W by Changzhou Galaxy Century Microelectronics

2N7002W

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; Package Shape: RECTANGULAR;
2N7002KW by Fairchild Semiconductor

2N7002KW

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;
SMMBFJ177LT1G by Onsemi

SMMBFJ177LT1G

Onsemi

Small Signal Field-Effect Transistors; Maximum Drain-Source On Resistance: 300 ohm; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
IRF9310TRPBF by International Rectifier

IRF9310TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Pulsed Drain Current (IDM): 160 A; Qualification: Not Qualified;
ZXMP10A13FTA by Diodes Incorporated

ZXMP10A13FTA

Diodes Incorporated

ZXMP10A13FTA by Diodes Inc. is a P-CHANNEL FET with 100V DS breakdown voltage, 0.7A max drain current, and 1 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C.
BSS138DW-7-F by Diodes Incorporated

BSS138DW-7-F

Diodes Incorporated

BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
SI1553CDL-T1-GE3 by Vishay Intertechnology

SI1553CDL-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI1553CDL-T1-GE3 is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. Ideal for switching applications, it operates in enhancement mode with max drain current of 0.7A and on-resistance of 0.39 ohm. With a temp range of -55 to 150°C, this MOSFET has a peak reflow temp of 260°C and feedback capacitance of 6pF.
2N7002 by Fairchild Semiconductor

2N7002

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002W by Micro Commercial Components

2N7002W

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e0; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;