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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | 2SJ586 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Transistor Element Material: SILICON; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; |
Datasheet | 2SJ586 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .1 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | 8.5 ohm |