2SJ598-AY by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SJ598-AY
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;
Datasheet	2SJ598-AY Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	23 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	1 W
Maximum Drain-Source On Resistance:	.19 ohm
Maximum Feedback Capacitance (Crss):	50 pF
JEDEC-95 Code:	TO-251
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	12 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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