Renesas Electronics - 2SK1215IGETL-E

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2SK1215IGETL-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK1215IGETL-E
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 24 dB; Terminal Position: DUAL; No. of Elements: 1;
Datasheet 2SK1215IGETL-E Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 24 dB
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .03 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
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