Renesas Electronics - 2SK1989

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2SK1989 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK1989
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 3 ohm;
Datasheet 2SK1989 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.5 A
Maximum Pulsed Drain Current (IDM): 10 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 30 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 3 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 73.8 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2.5 A
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