Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SK2596BXTR |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PSSO-F3; Transistor Element Material: SILICON; Maximum Drain Current (ID): .4 A; |
| Datasheet | 2SK2596BXTR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .4 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 17 V |
| Qualification: | Not Qualified |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |









