Renesas Electronics - 2SK2597

  1. Home
  2. Renesas Electronics - 2SK2597
2SK2597 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK2597
Description N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 15 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 2SK2597 Datasheet
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 15 A
Maximum Drain Current (Abs) (ID): 15 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CGH40006S by Wolfspeed

CGH40006S

Wolfspeed

CGH40006S by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C BAND applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode with a SINGLE configuration and SMALL OUTLINE package style for surface mount assembly.
PTVA101K02EVV1XWSA1 by Wolfspeed

PTVA101K02EVV1XWSA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: L BAND;
MRF136 by Motorola

MRF136

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
934064592112 by NXP Semiconductors

934064592112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;
CGH55030F2 by Wolfspeed

CGH55030F2

Wolfspeed

CGH55030F2 by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
BLF6G13LS-250PG by NXP Semiconductors

BLF6G13LS-250PG

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Minimum Power Gain (Gp): 15 dB; Operating Mode: ENHANCEMENT MODE;
PTFA091201EV4R250XTMA1 by Infineon Technologies

PTFA091201EV4R250XTMA1

Infineon Technologies

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PD54003 by STMicroelectronics

PD54003

STMicroelectronics

STMicroelectronics PD54003 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with 4A Drain Current and 52.8W Power Dissipation. Ideal for amplifier applications, it features a Gull Wing terminal form and small outline package style.
A3G22H400-04SR3 by NXP Semiconductors

A3G22H400-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; Minimum Operating Temperature: -55 Cel; Terminal Form: FLAT;
BLF6G15L-40RN by NXP Semiconductors

BLF6G15L-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
934064627118 by NXP Semiconductors

934064627118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRFE6VP100HSR5 by Freescale Semiconductor

MRFE6VP100HSR5

Freescale Semiconductor

N-CHANNEL; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
MRF181ZR1 by Onsemi

MRF181ZR1

Onsemi

MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
PD55008-E by STMicroelectronics

PD55008-E

STMicroelectronics

STMicroelectronics' PD55008-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 4A Drain Current. The PLASTIC/EPOXY package has GULL WING terminals, SMALL OUTLINE style, and can handle up to 52.8W power dissipation at 165°C max temperature.
LET21030C by STMicroelectronics

LET21030C

STMicroelectronics

LET21030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the S band. This surface-mount transistor ensures efficient performance up to 200 °C.
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.
SD2931-10W by STMicroelectronics

SD2931-10W

STMicroelectronics

SD2931-10W by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W at 200°C.
A2V07H525-04NR6 by NXP Semiconductors

A2V07H525-04NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
MRFE6VS25GNR1 by Freescale Semiconductor

MRFE6VS25GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
PD85015TRM-E by STMicroelectronics

PD85015TRM-E

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;