Renesas Electronics - 2SK3230C-EH

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2SK3230C-EH by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK3230C-EH
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: JUNCTION;
Datasheet 2SK3230C-EH Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
Maximum Drain Current (ID): .01 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Additional Features: LOW NOISE
Maximum Operating Temperature: 125 Cel
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