Renesas Electronics - 2SK3349

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2SK3349 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK3349
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .05 A;
Datasheet 2SK3349 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .1 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Drain Current (ID): .05 A
Maximum Drain Current (Abs) (ID): .05 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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